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Tunable electronic and optical properties of a BAs/As heterostructure by vertical strain and external electric field

Based on the first-principles method, we investigated the electronic properties of a BAs/arsenene (As) van der Waals (vdW) heterostructure and found that it has an intrinsic type-II band alignment with a direct band gap of 0.25 eV, which favors the separation of photogenerated electrons and holes. T...

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Detalles Bibliográficos
Autores principales:	Deng, X. Q., Sheng, R. Q., Jing, Q.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2021
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9034138/ https://www.ncbi.nlm.nih.gov/pubmed/35478794 http://dx.doi.org/10.1039/d1ra03606h

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