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Sensor behavior of MoS(2) field-effect transistor with light injection toward chemical recognition
The application of field-effect transistor (FET) devices with atomically thin channels as sensors has attracted significant attention, where the adsorption of atoms/molecules on the channels can be detected by the change in the properties of FET. Thus, to further enhance the chemical sensitivity of...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9037302/ https://www.ncbi.nlm.nih.gov/pubmed/35479991 http://dx.doi.org/10.1039/d1ra03698j |
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author | Alam, Md Iftekharul Takaoka, Tsuyoshi Waizumi, Hiroki Tanaka, Yudai Al Mamun, Muhammad Shamim Ando, Atsushi Komeda, Tadahiro |
author_facet | Alam, Md Iftekharul Takaoka, Tsuyoshi Waizumi, Hiroki Tanaka, Yudai Al Mamun, Muhammad Shamim Ando, Atsushi Komeda, Tadahiro |
author_sort | Alam, Md Iftekharul |
collection | PubMed |
description | The application of field-effect transistor (FET) devices with atomically thin channels as sensors has attracted significant attention, where the adsorption of atoms/molecules on the channels can be detected by the change in the properties of FET. Thus, to further enhance the chemical sensitivity of FETs, we developed a method to distinguish the chemical properties of adsorbates from the electric behavior of FET devices. Herein, we explored the variation in the FET properties of an MoS(2)-FET upon visible light injection and the effect of molecule adsorption for chemical recognition. By injecting light, the drain current (I(d)) increased from the light-off state, which is defined as (ΔI(d))(ph). We examined this effect using CuPc molecules deposited on the channel. The (ΔI(d))(ph)vs. wavelength continuous spectrum in the visible region showed a peak at the energy for the excitation from the highest occupied orbital (HOMO) to the molecule-induced state (MIS). The energy position and the intensity of this feature showed a sensitive variation with the adsorption of the CuPc molecule and are in good agreement with previously reported photo-absorption spectroscopy data, indicating that this technique can be employed for chemical recognition. |
format | Online Article Text |
id | pubmed-9037302 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | The Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-90373022022-04-26 Sensor behavior of MoS(2) field-effect transistor with light injection toward chemical recognition Alam, Md Iftekharul Takaoka, Tsuyoshi Waizumi, Hiroki Tanaka, Yudai Al Mamun, Muhammad Shamim Ando, Atsushi Komeda, Tadahiro RSC Adv Chemistry The application of field-effect transistor (FET) devices with atomically thin channels as sensors has attracted significant attention, where the adsorption of atoms/molecules on the channels can be detected by the change in the properties of FET. Thus, to further enhance the chemical sensitivity of FETs, we developed a method to distinguish the chemical properties of adsorbates from the electric behavior of FET devices. Herein, we explored the variation in the FET properties of an MoS(2)-FET upon visible light injection and the effect of molecule adsorption for chemical recognition. By injecting light, the drain current (I(d)) increased from the light-off state, which is defined as (ΔI(d))(ph). We examined this effect using CuPc molecules deposited on the channel. The (ΔI(d))(ph)vs. wavelength continuous spectrum in the visible region showed a peak at the energy for the excitation from the highest occupied orbital (HOMO) to the molecule-induced state (MIS). The energy position and the intensity of this feature showed a sensitive variation with the adsorption of the CuPc molecule and are in good agreement with previously reported photo-absorption spectroscopy data, indicating that this technique can be employed for chemical recognition. The Royal Society of Chemistry 2021-08-03 /pmc/articles/PMC9037302/ /pubmed/35479991 http://dx.doi.org/10.1039/d1ra03698j Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/ |
spellingShingle | Chemistry Alam, Md Iftekharul Takaoka, Tsuyoshi Waizumi, Hiroki Tanaka, Yudai Al Mamun, Muhammad Shamim Ando, Atsushi Komeda, Tadahiro Sensor behavior of MoS(2) field-effect transistor with light injection toward chemical recognition |
title | Sensor behavior of MoS(2) field-effect transistor with light injection toward chemical recognition |
title_full | Sensor behavior of MoS(2) field-effect transistor with light injection toward chemical recognition |
title_fullStr | Sensor behavior of MoS(2) field-effect transistor with light injection toward chemical recognition |
title_full_unstemmed | Sensor behavior of MoS(2) field-effect transistor with light injection toward chemical recognition |
title_short | Sensor behavior of MoS(2) field-effect transistor with light injection toward chemical recognition |
title_sort | sensor behavior of mos(2) field-effect transistor with light injection toward chemical recognition |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9037302/ https://www.ncbi.nlm.nih.gov/pubmed/35479991 http://dx.doi.org/10.1039/d1ra03698j |
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