Investigation of oxidation mechanism of SiC single crystal for plasma electrochemical oxidation

Silicon carbide (SiC) is a hard-to-machine material due to its high hardness and chemical stability, and usually an essential step in chemical mechanical polishing (CMP) is to modify the SiC surface without introducing damage or other elements, then to polish the modified surface. For high quality a...

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Detalles Bibliográficos
Autores principales: Yin, Xincheng, Li, Shujuan, Ma, Gaoling, Jia, Zhen, Liu, Xu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9037901/
https://www.ncbi.nlm.nih.gov/pubmed/35480681
http://dx.doi.org/10.1039/d1ra04604g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9037901/
https://www.ncbi.nlm.nih.gov/pubmed/35480681
http://dx.doi.org/10.1039/d1ra04604g

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