Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer

Although cuprous phosphide (Cu(3)P) has been widely studied and applied in other fields, its photoluminescence (PL) properties are rarely investigated. Herein, we report that Cu(3)P can emit near-infrared light at 750 nm. We show that the annealing and the presence of cuprous oxide can enhance the P...

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Detalles Bibliográficos
Autores principales: Peng, Xue, Lv, Yanfei, Fu, Li, Chen, Fei, Su, Weitao, Li, Jingzhou, Zhang, Qi, Zhao, Shichao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9042379/
https://www.ncbi.nlm.nih.gov/pubmed/35497268
http://dx.doi.org/10.1039/d1ra07112b
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author Peng, Xue
Lv, Yanfei
Fu, Li
Chen, Fei
Su, Weitao
Li, Jingzhou
Zhang, Qi
Zhao, Shichao
author_facet Peng, Xue
Lv, Yanfei
Fu, Li
Chen, Fei
Su, Weitao
Li, Jingzhou
Zhang, Qi
Zhao, Shichao
author_sort Peng, Xue
collection PubMed
description Although cuprous phosphide (Cu(3)P) has been widely studied and applied in other fields, its photoluminescence (PL) properties are rarely investigated. Herein, we report that Cu(3)P can emit near-infrared light at 750 nm. We show that the annealing and the presence of cuprous oxide can enhance the PL emission. The mechanism of the PL enhancement is the improvement of crystal quality and the formation of a space charge region. Our results provide a reference for improving the PL properties of p-type semiconductors.
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spelling pubmed-90423792022-04-28 Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer Peng, Xue Lv, Yanfei Fu, Li Chen, Fei Su, Weitao Li, Jingzhou Zhang, Qi Zhao, Shichao RSC Adv Chemistry Although cuprous phosphide (Cu(3)P) has been widely studied and applied in other fields, its photoluminescence (PL) properties are rarely investigated. Herein, we report that Cu(3)P can emit near-infrared light at 750 nm. We show that the annealing and the presence of cuprous oxide can enhance the PL emission. The mechanism of the PL enhancement is the improvement of crystal quality and the formation of a space charge region. Our results provide a reference for improving the PL properties of p-type semiconductors. The Royal Society of Chemistry 2021-10-21 /pmc/articles/PMC9042379/ /pubmed/35497268 http://dx.doi.org/10.1039/d1ra07112b Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Peng, Xue
Lv, Yanfei
Fu, Li
Chen, Fei
Su, Weitao
Li, Jingzhou
Zhang, Qi
Zhao, Shichao
Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer
title Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer
title_full Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer
title_fullStr Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer
title_full_unstemmed Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer
title_short Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer
title_sort photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9042379/
https://www.ncbi.nlm.nih.gov/pubmed/35497268
http://dx.doi.org/10.1039/d1ra07112b
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