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Gel-based precursors for the high-performance of n-channel GaInSnZnO and p-channel CuGaSnSO thin-film transistors
The performance of metal–oxide thin-film transistors (TFTs) should be further improved for the applications of next-generation displays. Here, the developments of gel-derived gallium–indium–tin–zinc oxide (GITZO) for n-channel and copper–gallium–tin–sulfide oxide (CGTSO) for p-channel TFTs are demon...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9042381/ https://www.ncbi.nlm.nih.gov/pubmed/35497315 http://dx.doi.org/10.1039/d1ra04787f |