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High-mobility semiconducting polymers with different spin ground states

Organic semiconductors with high-spin ground states are fascinating because they could enable fundamental understanding on the spin-related phenomenon in light element and provide opportunities for organic magnetic and quantum materials. Although high-spin ground states have been observed in some qu...

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Autores principales: Chen, Xiao-Xiang, Li, Jia-Tong, Fang, Yu-Hui, Deng, Xin-Yu, Wang, Xue-Qing, Liu, Guangchao, Wang, Yunfei, Gu, Xiaodan, Jiang, Shang-Da, Lei, Ting
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9042904/
https://www.ncbi.nlm.nih.gov/pubmed/35474302
http://dx.doi.org/10.1038/s41467-022-29918-w
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author Chen, Xiao-Xiang
Li, Jia-Tong
Fang, Yu-Hui
Deng, Xin-Yu
Wang, Xue-Qing
Liu, Guangchao
Wang, Yunfei
Gu, Xiaodan
Jiang, Shang-Da
Lei, Ting
author_facet Chen, Xiao-Xiang
Li, Jia-Tong
Fang, Yu-Hui
Deng, Xin-Yu
Wang, Xue-Qing
Liu, Guangchao
Wang, Yunfei
Gu, Xiaodan
Jiang, Shang-Da
Lei, Ting
author_sort Chen, Xiao-Xiang
collection PubMed
description Organic semiconductors with high-spin ground states are fascinating because they could enable fundamental understanding on the spin-related phenomenon in light element and provide opportunities for organic magnetic and quantum materials. Although high-spin ground states have been observed in some quinoidal type small molecules or doped organic semiconductors, semiconducting polymers with high-spin at their neutral ground state are rarely reported. Here we report three high-mobility semiconducting polymers with different spin ground states. We show that polymer building blocks with small singlet-triplet energy gap (ΔE(S-T)) could enable small ΔE(S-T) gap and increase the diradical character in copolymers. We demonstrate that the electronic structure, spin density, and solid-state interchain interactions in the high-spin polymers are crucial for their ground states. Polymers with a triplet ground state (S = 1) could exhibit doublet (S = 1/2) behavior due to different spin distributions and solid-state interchain spin-spin interactions. Besides, these polymers showed outstanding charge transport properties with high hole/electron mobilities and can be both n- and p-doped with superior conductivities. Our results demonstrate a rational approach to obtain high-mobility semiconducting polymers with different spin ground states.
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spelling pubmed-90429042022-04-28 High-mobility semiconducting polymers with different spin ground states Chen, Xiao-Xiang Li, Jia-Tong Fang, Yu-Hui Deng, Xin-Yu Wang, Xue-Qing Liu, Guangchao Wang, Yunfei Gu, Xiaodan Jiang, Shang-Da Lei, Ting Nat Commun Article Organic semiconductors with high-spin ground states are fascinating because they could enable fundamental understanding on the spin-related phenomenon in light element and provide opportunities for organic magnetic and quantum materials. Although high-spin ground states have been observed in some quinoidal type small molecules or doped organic semiconductors, semiconducting polymers with high-spin at their neutral ground state are rarely reported. Here we report three high-mobility semiconducting polymers with different spin ground states. We show that polymer building blocks with small singlet-triplet energy gap (ΔE(S-T)) could enable small ΔE(S-T) gap and increase the diradical character in copolymers. We demonstrate that the electronic structure, spin density, and solid-state interchain interactions in the high-spin polymers are crucial for their ground states. Polymers with a triplet ground state (S = 1) could exhibit doublet (S = 1/2) behavior due to different spin distributions and solid-state interchain spin-spin interactions. Besides, these polymers showed outstanding charge transport properties with high hole/electron mobilities and can be both n- and p-doped with superior conductivities. Our results demonstrate a rational approach to obtain high-mobility semiconducting polymers with different spin ground states. Nature Publishing Group UK 2022-04-26 /pmc/articles/PMC9042904/ /pubmed/35474302 http://dx.doi.org/10.1038/s41467-022-29918-w Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Chen, Xiao-Xiang
Li, Jia-Tong
Fang, Yu-Hui
Deng, Xin-Yu
Wang, Xue-Qing
Liu, Guangchao
Wang, Yunfei
Gu, Xiaodan
Jiang, Shang-Da
Lei, Ting
High-mobility semiconducting polymers with different spin ground states
title High-mobility semiconducting polymers with different spin ground states
title_full High-mobility semiconducting polymers with different spin ground states
title_fullStr High-mobility semiconducting polymers with different spin ground states
title_full_unstemmed High-mobility semiconducting polymers with different spin ground states
title_short High-mobility semiconducting polymers with different spin ground states
title_sort high-mobility semiconducting polymers with different spin ground states
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9042904/
https://www.ncbi.nlm.nih.gov/pubmed/35474302
http://dx.doi.org/10.1038/s41467-022-29918-w
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