Surface plasmon coupling regulated CsPbBr(3) perovskite lasers in a metal–insulator–semiconductor structure

A strong coupling effect often occurs between a metal and semiconductor, so micro/nano-lasers based on surface plasmons can break through the optical diffraction limit and realize unprecedented linear and nonlinear enhancement of optical processes. Hence, metal–insulator–semiconductor (M–I–S) structures based on perovskite materials were explored to design optoelectronic devices. Herein, we constructed an Ag/SiO(2)/CsPbBr(3) hybrid structure to generate surface plasmon coupled emission between the metal and CsPbBr(3) perovskite. Combined with experimental characterization and COMSOL Multiphysics software simulations, the best enhancement for CsPbBr(3) radiative recombination efficiencies can be achieved with a 10 nm-thickness of the SiO(2) layer and 80 nm-thickness of the Ag metal film, further verified by optimizing the thickness of the SiO(2) layer above the Ag metal film. In this state, the laser threshold can be as low as 0.138 μW with a quality (Q) factor of up to 3907 under optical pumping, which demonstrate a significant step toward practical applications in biological technology, chemical identification, and optical interconnections of information transmission.