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Spin-Coated Heterogenous Stacked Electrodes for Performance Enhancement in CMOS-Compatible On-Chip Microsupercapacitors
[Image: see text] Integration of microsupercapacitors (MSCs) with on-chip sensors and actuators with nanoenergy harvesters can improve the lifetime of wireless sensor nodes in an Internet-of-Things (IoT) architecture. However, to be easy to integrate with such harvester technology, MSCs should be fa...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9044397/ https://www.ncbi.nlm.nih.gov/pubmed/35497683 http://dx.doi.org/10.1021/acsaem.1c03745 |
Sumario: | [Image: see text] Integration of microsupercapacitors (MSCs) with on-chip sensors and actuators with nanoenergy harvesters can improve the lifetime of wireless sensor nodes in an Internet-of-Things (IoT) architecture. However, to be easy to integrate with such harvester technology, MSCs should be fabricated through a complementary-metal-oxide-semiconductor (CMOS) compatible technology, ubiquitous in electrode choice with the capability of heterogeneous stacking of electrodes for modulation in properties driven by application requirements. In this article, we address both these issues through fabrication of multielectrode modular, high energy density microsupercapacitors (MSC) containing reduced graphene oxide (GO), GO-heptadecane-9-amine (GO-HD9A), rGO-octadecylamine (rGO-ODA), and rGO-heptadecane-9-amine (rGO-HD9A) that stack through a scalable, CMOS compatible, high-wafer-yield spin-coating process. Furthermore, we compare the performance of the stack with individual electrode MSCs fabricated through the same process. The individual electrodes, in the presence of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfony)imide (EMIM-TFSI), demonstrate a capacitance of 38, 30, 36, and 105 μF cm(–2) at 20 mV s(–1) whereas the fabricated stack of electrodes demonstrates a high capacitance of 280 μF cm(–2) at 20 mV s(–1) while retaining and enhancing the material-dependent capacitance, charge retention, and power density. |
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