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Control of Oxygen Vacancy Ordering in Brownmillerite Thin Films via Ionic Liquid Gating

[Image: see text] Oxygen defects and their atomic arrangements play a significant role in the physical properties of many transition metal oxides. The exemplary perovskite SrCoO(3-δ) (P-SCO) is metallic and ferromagnetic. However, its daughter phase, the brownmillerite SrCoO(2.5) (BM-SCO), is insula...

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Detalles Bibliográficos
Autores principales: Han, Hyeon, Sharma, Arpit, Meyerheim, Holger L., Yoon, Jiho, Deniz, Hakan, Jeon, Kun-Rok, Sharma, Ankit K., Mohseni, Katayoon, Guillemard, Charles, Valvidares, Manuel, Gargiani, Pierluigi, Parkin, Stuart S. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9047007/
https://www.ncbi.nlm.nih.gov/pubmed/35377608
http://dx.doi.org/10.1021/acsnano.2c00012
Descripción
Sumario:[Image: see text] Oxygen defects and their atomic arrangements play a significant role in the physical properties of many transition metal oxides. The exemplary perovskite SrCoO(3-δ) (P-SCO) is metallic and ferromagnetic. However, its daughter phase, the brownmillerite SrCoO(2.5) (BM-SCO), is insulating and an antiferromagnet. Moreover, BM-SCO exhibits oxygen vacancy channels (OVCs) that in thin films can be oriented either horizontally (H-SCO) or vertically (V-SCO) to the film’s surface. To date, the orientation of these OVCs has been manipulated by control of the thin film deposition parameters or by using a substrate-induced strain. Here, we present a method to electrically control the OVC ordering in thin layers via ionic liquid gating (ILG). We show that H-SCO (antiferromagnetic insulator, AFI) can be converted to P-SCO (ferromagnetic metal, FM) and subsequently to V-SCO (AFI) by the insertion and subtraction of oxygen throughout thick films via ILG. Moreover, these processes are independent of substrate-induced strain which favors formation of H-SCO in the as-deposited film. The electric-field control of the OVC channels is a path toward the creation of oxitronic devices.