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Sub-millimeter size high mobility single crystal MoSe(2) monolayers synthesized by NaCl-assisted chemical vapor deposition

Monolayer MoSe(2) is a transition metal dichalcogenide with a narrow bandgap, high optical absorbance and large spin-splitting energy, giving it great promise for applications in the field of optoelectronics. Producing monolayer MoSe(2) films in a reliable and scalable manner is still a challenging...

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Detalles Bibliográficos
Autores principales: Li, Juncheng, Yan, Wenjie, Lv, Yanhui, Leng, Jian, Zhang, Duan, Ó Coileáin, Cormac, Cullen, Conor P., Stimpel-Lindner, Tanja, Duesberg, Georg S., Cho, Jiung, Choi, Miri, Chun, Byong Sun, Zhao, Yanfeng, Lv, Chengzhai, Arora, Sunil K., Wu, Han-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9048230/
https://www.ncbi.nlm.nih.gov/pubmed/35494696
http://dx.doi.org/10.1039/c9ra09103c
Descripción
Sumario:Monolayer MoSe(2) is a transition metal dichalcogenide with a narrow bandgap, high optical absorbance and large spin-splitting energy, giving it great promise for applications in the field of optoelectronics. Producing monolayer MoSe(2) films in a reliable and scalable manner is still a challenging task as conventional chemical vapor deposition (CVD) or exfoliation based techniques are limited due to the small domains/nanosheet sizes obtained. Here, based on NaCl assisted CVD, we demonstrate the simple and stable synthesis of sub-millimeter size single-crystal MoSe(2) monolayers with mobilities ranging from 38 to 8 cm(2) V(−1) s(−1). The average mobility is 12 cm(2) V(−1) s(−1). We further determine that the optical responsivity of monolayer MoSe(2) is 42 mA W(−1), with an external quantum efficiency of 8.22%.