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Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier
Nanocrystalline diamond (NCD) films grown on Si substrates by microwave plasma enhanced chemical vapor deposition (MWPECVD) were subjected to Ni-mediated graphitization to cover them with a conductive layer. Results of transmission electron microscopy including electron energy-loss spectroscopy of c...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9049891/ https://www.ncbi.nlm.nih.gov/pubmed/35497871 http://dx.doi.org/10.1039/d0ra00809e |
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author | Tulić, Semir Waitz, Thomas Romanyuk, Oleksandr Varga, Marián Čaplovičová, Mária Habler, Gerlinde Vretenár, Viliam Kotlár, Mário Kromka, Alexander Rezek, Bohuslav Skákalová, Viera |
author_facet | Tulić, Semir Waitz, Thomas Romanyuk, Oleksandr Varga, Marián Čaplovičová, Mária Habler, Gerlinde Vretenár, Viliam Kotlár, Mário Kromka, Alexander Rezek, Bohuslav Skákalová, Viera |
author_sort | Tulić, Semir |
collection | PubMed |
description | Nanocrystalline diamond (NCD) films grown on Si substrates by microwave plasma enhanced chemical vapor deposition (MWPECVD) were subjected to Ni-mediated graphitization to cover them with a conductive layer. Results of transmission electron microscopy including electron energy-loss spectroscopy of cross-sectional samples demonstrate that the oxide layer on Si substrates (∼5 nm native SiO(2)) has been damaged by microwave plasma during the early stage of NCD growth. During the heat treatment for graphitizing the NCD layer, the permeability or absence of the oxide barrier allow Ni nanoparticles to diffuse into the Si substrate and cause additional solid-state reactions producing pyramidal crystals of NiSi(2) and SiC nanocrystals. The latter are found impinged into the NiSi(2) pyramids but only when the interfacial oxide layer is absent, replaced by amorphous SiC. The complex phase morphology of the samples is also reflected in the temperature dependence of electrical conductivity, where multiple pathways of the electronic transport dominate in different temperature regions. We present models explaining the observed cascade of solid-state reactions and resulting electronic transport properties of such heterostructures. |
format | Online Article Text |
id | pubmed-9049891 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | The Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-90498912022-04-29 Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier Tulić, Semir Waitz, Thomas Romanyuk, Oleksandr Varga, Marián Čaplovičová, Mária Habler, Gerlinde Vretenár, Viliam Kotlár, Mário Kromka, Alexander Rezek, Bohuslav Skákalová, Viera RSC Adv Chemistry Nanocrystalline diamond (NCD) films grown on Si substrates by microwave plasma enhanced chemical vapor deposition (MWPECVD) were subjected to Ni-mediated graphitization to cover them with a conductive layer. Results of transmission electron microscopy including electron energy-loss spectroscopy of cross-sectional samples demonstrate that the oxide layer on Si substrates (∼5 nm native SiO(2)) has been damaged by microwave plasma during the early stage of NCD growth. During the heat treatment for graphitizing the NCD layer, the permeability or absence of the oxide barrier allow Ni nanoparticles to diffuse into the Si substrate and cause additional solid-state reactions producing pyramidal crystals of NiSi(2) and SiC nanocrystals. The latter are found impinged into the NiSi(2) pyramids but only when the interfacial oxide layer is absent, replaced by amorphous SiC. The complex phase morphology of the samples is also reflected in the temperature dependence of electrical conductivity, where multiple pathways of the electronic transport dominate in different temperature regions. We present models explaining the observed cascade of solid-state reactions and resulting electronic transport properties of such heterostructures. The Royal Society of Chemistry 2020-02-26 /pmc/articles/PMC9049891/ /pubmed/35497871 http://dx.doi.org/10.1039/d0ra00809e Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/ |
spellingShingle | Chemistry Tulić, Semir Waitz, Thomas Romanyuk, Oleksandr Varga, Marián Čaplovičová, Mária Habler, Gerlinde Vretenár, Viliam Kotlár, Mário Kromka, Alexander Rezek, Bohuslav Skákalová, Viera Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier |
title | Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier |
title_full | Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier |
title_fullStr | Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier |
title_full_unstemmed | Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier |
title_short | Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier |
title_sort | ni-mediated reactions in nanocrystalline diamond on si substrates: the role of the oxide barrier |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9049891/ https://www.ncbi.nlm.nih.gov/pubmed/35497871 http://dx.doi.org/10.1039/d0ra00809e |
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