An effective hydroxylation route for a highly sensitive glucose sensor using APTES/GOx functionalized AlGaN/GaN high electron mobility transistor

A highly sensitive glucose sensor based on AlGaN/GaN high electron mobility transistor (HEMT) has been fabricated. The hydroxyl groups on the GaN surface were achieved by the decomposition of hydrogen peroxide solution (H(2)O(2)) under UV irradiation for the production of hydroxyl radicals. The self...

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Detalles Bibliográficos
Autores principales: Liu, Jun, Zhang, Heqiu, Xue, Dongyang, Ahmad, Aqrab ul, Xia, Xiaochuan, Liu, Yang, Huang, Huishi, Guo, Wenping, Liang, Hongwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9050454/
https://www.ncbi.nlm.nih.gov/pubmed/35495354
http://dx.doi.org/10.1039/c9ra09446f

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9050454/
https://www.ncbi.nlm.nih.gov/pubmed/35495354
http://dx.doi.org/10.1039/c9ra09446f

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