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Rapid synthesis of thermoelectric SnSe thin films by MPCVD

Microwave plasma chemical vapor deposition (MPCVD) has been traditionally used to synthesize carbon-based materials such as diamonds, carbon nanotubes and graphene. Here we report that a rapid and catalyst-free growth of SnSe thin films can be achieved by using single-mode MPCVD with appropriate sou...

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Detalles Bibliográficos
Autores principales: Feng, Yuyu, Zhang, Xi, Lei, Li, Nie, Ya, Xiang, Gang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9050828/
https://www.ncbi.nlm.nih.gov/pubmed/35496615
http://dx.doi.org/10.1039/d0ra01203c
Descripción
Sumario:Microwave plasma chemical vapor deposition (MPCVD) has been traditionally used to synthesize carbon-based materials such as diamonds, carbon nanotubes and graphene. Here we report that a rapid and catalyst-free growth of SnSe thin films can be achieved by using single-mode MPCVD with appropriate source materials. The analysis combining microscope images, X-ray diffraction patterns and lattice vibration modes shows that the grown thin films were composed of orthorhombic structured SnSe polycrystals. Further thermoelectric (TE) characterization of the SnSe films reveals the high-performance power factor of 3.98 μW cm(−1) K(−2) at 600 K. Our results may open an avenue for rapid synthesis of new types of materials such as IV–VI compounds and be useful for TE application of these materials.