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A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven Hf(x)Ti(y)Al(z)O nanolaminates
In this work, a series of ternary HfTiO and TiAlO films and quaternary HfTiAlO films prepared with different stoichiometric ratios via atomic layer deposition (ALD) were deposited on Si substrates. The interfacial properties, band alignments, and electrical characteristics were analyzed to evaluate...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052381/ https://www.ncbi.nlm.nih.gov/pubmed/35497120 http://dx.doi.org/10.1039/d0ra01073a |
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author | Gao, Juan He, Gang Hao, Lin Wang, Die Zhao, Lin |
author_facet | Gao, Juan He, Gang Hao, Lin Wang, Die Zhao, Lin |
author_sort | Gao, Juan |
collection | PubMed |
description | In this work, a series of ternary HfTiO and TiAlO films and quaternary HfTiAlO films prepared with different stoichiometric ratios via atomic layer deposition (ALD) were deposited on Si substrates. The interfacial properties, band alignments, and electrical characteristics were analyzed to evaluate the electrical performance of the corresponding metal–oxide–semiconductor (MOS) capacitors. Based on the characterization data, it can be noted that the permittivity of HfTiO increases on increasing the Ti content, while the deterioration of the film quality leads to an increased leakage current. For TiAlO, as the Al content increased gradually, the interface quality improved, but the corresponding permittivity was sacrificed. As for HfTiAlO, the addition of Ti and Al jointly in HfO(2) could improve the interface performance, enlarge the energy band offset, enhance the dielectric constant, and reduce the leakage current simultaneously. The interfacial analysis and electrical characterization demonstrated that HfTiAlO with an ALD cycle ratio of Hf : Ti : Al = 6 : 1 : 1 had the most excellent film quality, interface performance and electrical properties, including a larger dielectric constant of 28.8, a larger conduction band offset with Si of 2.47 eV, and the lowest leakage current density of 1.11 × 10(−5) A cm(−2). |
format | Online Article Text |
id | pubmed-9052381 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | The Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-90523812022-04-29 A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven Hf(x)Ti(y)Al(z)O nanolaminates Gao, Juan He, Gang Hao, Lin Wang, Die Zhao, Lin RSC Adv Chemistry In this work, a series of ternary HfTiO and TiAlO films and quaternary HfTiAlO films prepared with different stoichiometric ratios via atomic layer deposition (ALD) were deposited on Si substrates. The interfacial properties, band alignments, and electrical characteristics were analyzed to evaluate the electrical performance of the corresponding metal–oxide–semiconductor (MOS) capacitors. Based on the characterization data, it can be noted that the permittivity of HfTiO increases on increasing the Ti content, while the deterioration of the film quality leads to an increased leakage current. For TiAlO, as the Al content increased gradually, the interface quality improved, but the corresponding permittivity was sacrificed. As for HfTiAlO, the addition of Ti and Al jointly in HfO(2) could improve the interface performance, enlarge the energy band offset, enhance the dielectric constant, and reduce the leakage current simultaneously. The interfacial analysis and electrical characterization demonstrated that HfTiAlO with an ALD cycle ratio of Hf : Ti : Al = 6 : 1 : 1 had the most excellent film quality, interface performance and electrical properties, including a larger dielectric constant of 28.8, a larger conduction band offset with Si of 2.47 eV, and the lowest leakage current density of 1.11 × 10(−5) A cm(−2). The Royal Society of Chemistry 2020-04-14 /pmc/articles/PMC9052381/ /pubmed/35497120 http://dx.doi.org/10.1039/d0ra01073a Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/ |
spellingShingle | Chemistry Gao, Juan He, Gang Hao, Lin Wang, Die Zhao, Lin A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven Hf(x)Ti(y)Al(z)O nanolaminates |
title | A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven Hf(x)Ti(y)Al(z)O nanolaminates |
title_full | A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven Hf(x)Ti(y)Al(z)O nanolaminates |
title_fullStr | A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven Hf(x)Ti(y)Al(z)O nanolaminates |
title_full_unstemmed | A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven Hf(x)Ti(y)Al(z)O nanolaminates |
title_short | A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven Hf(x)Ti(y)Al(z)O nanolaminates |
title_sort | comparative study on the evolution of the interface chemistry and electrical performance of ald-driven hf(x)ti(y)al(z)o nanolaminates |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052381/ https://www.ncbi.nlm.nih.gov/pubmed/35497120 http://dx.doi.org/10.1039/d0ra01073a |
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