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A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven Hf(x)Ti(y)Al(z)O nanolaminates

In this work, a series of ternary HfTiO and TiAlO films and quaternary HfTiAlO films prepared with different stoichiometric ratios via atomic layer deposition (ALD) were deposited on Si substrates. The interfacial properties, band alignments, and electrical characteristics were analyzed to evaluate...

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Detalles Bibliográficos
Autores principales:	Gao, Juan, He, Gang, Hao, Lin, Wang, Die, Zhao, Lin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2020
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052381/ https://www.ncbi.nlm.nih.gov/pubmed/35497120 http://dx.doi.org/10.1039/d0ra01073a

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