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Electro–opto–mechano driven reversible multi-state memory devices based on photocurrent in Bi(0.9)Eu(0.1)FeO(3)/La(0.67)Sr(0.33)MnO(3)/PMN-PT heterostructures
A single device with extensive new functionality is highly attractive for the increasing demands for complex and multifunctional optoelectronics. Multi-field coupling has been drawing considerable attention because it leads to materials that can be simultaneously operated under several external stim...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052503/ https://www.ncbi.nlm.nih.gov/pubmed/35493661 http://dx.doi.org/10.1039/d0ra00725k |
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author | Wei, Maocai Liu, Meifeng Yang, Lun Li, Xiang Xie, Yunlong Wang, Xiuzhang Li, Zijiong Su, Yuling Hu, Zhongqiang Liu, Jun-Ming |
author_facet | Wei, Maocai Liu, Meifeng Yang, Lun Li, Xiang Xie, Yunlong Wang, Xiuzhang Li, Zijiong Su, Yuling Hu, Zhongqiang Liu, Jun-Ming |
author_sort | Wei, Maocai |
collection | PubMed |
description | A single device with extensive new functionality is highly attractive for the increasing demands for complex and multifunctional optoelectronics. Multi-field coupling has been drawing considerable attention because it leads to materials that can be simultaneously operated under several external stimuli (e.g. magnetic field, electric field, electric current, light, strain, etc.), which allows each unit to store multiple bits of information and thus enhance the memory density. In this work, we report an electro–opto–mechano-driven reversible multi-state memory device based on photocurrent in Bi(0.9)Eu(0.1)FeO(3) (BEFO)/La(0.67)Sr(0.33)MnO(3) (LSMO)/0.7Pb(Mg(1/3)Nb(2/3))O(3)-0.3PbTiO(3) (PMN-PT) heterostructures. It is found that the short-circuit current density (J(sc)) can be switched by the variation of the potential barrier height and depletion region width at the Pt/BEFO interface modulated by light illumination, external strain, and ferroelectric polarization reversal. This work opens up pathways toward the emergence of novel device design features with dynamic control for developing high-performance electric–optical–mechanism integrated devices based on the BiFeO(3)-based heterostructures. |
format | Online Article Text |
id | pubmed-9052503 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | The Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-90525032022-04-29 Electro–opto–mechano driven reversible multi-state memory devices based on photocurrent in Bi(0.9)Eu(0.1)FeO(3)/La(0.67)Sr(0.33)MnO(3)/PMN-PT heterostructures Wei, Maocai Liu, Meifeng Yang, Lun Li, Xiang Xie, Yunlong Wang, Xiuzhang Li, Zijiong Su, Yuling Hu, Zhongqiang Liu, Jun-Ming RSC Adv Chemistry A single device with extensive new functionality is highly attractive for the increasing demands for complex and multifunctional optoelectronics. Multi-field coupling has been drawing considerable attention because it leads to materials that can be simultaneously operated under several external stimuli (e.g. magnetic field, electric field, electric current, light, strain, etc.), which allows each unit to store multiple bits of information and thus enhance the memory density. In this work, we report an electro–opto–mechano-driven reversible multi-state memory device based on photocurrent in Bi(0.9)Eu(0.1)FeO(3) (BEFO)/La(0.67)Sr(0.33)MnO(3) (LSMO)/0.7Pb(Mg(1/3)Nb(2/3))O(3)-0.3PbTiO(3) (PMN-PT) heterostructures. It is found that the short-circuit current density (J(sc)) can be switched by the variation of the potential barrier height and depletion region width at the Pt/BEFO interface modulated by light illumination, external strain, and ferroelectric polarization reversal. This work opens up pathways toward the emergence of novel device design features with dynamic control for developing high-performance electric–optical–mechanism integrated devices based on the BiFeO(3)-based heterostructures. The Royal Society of Chemistry 2020-04-22 /pmc/articles/PMC9052503/ /pubmed/35493661 http://dx.doi.org/10.1039/d0ra00725k Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/ |
spellingShingle | Chemistry Wei, Maocai Liu, Meifeng Yang, Lun Li, Xiang Xie, Yunlong Wang, Xiuzhang Li, Zijiong Su, Yuling Hu, Zhongqiang Liu, Jun-Ming Electro–opto–mechano driven reversible multi-state memory devices based on photocurrent in Bi(0.9)Eu(0.1)FeO(3)/La(0.67)Sr(0.33)MnO(3)/PMN-PT heterostructures |
title | Electro–opto–mechano driven reversible multi-state memory devices based on photocurrent in Bi(0.9)Eu(0.1)FeO(3)/La(0.67)Sr(0.33)MnO(3)/PMN-PT heterostructures |
title_full | Electro–opto–mechano driven reversible multi-state memory devices based on photocurrent in Bi(0.9)Eu(0.1)FeO(3)/La(0.67)Sr(0.33)MnO(3)/PMN-PT heterostructures |
title_fullStr | Electro–opto–mechano driven reversible multi-state memory devices based on photocurrent in Bi(0.9)Eu(0.1)FeO(3)/La(0.67)Sr(0.33)MnO(3)/PMN-PT heterostructures |
title_full_unstemmed | Electro–opto–mechano driven reversible multi-state memory devices based on photocurrent in Bi(0.9)Eu(0.1)FeO(3)/La(0.67)Sr(0.33)MnO(3)/PMN-PT heterostructures |
title_short | Electro–opto–mechano driven reversible multi-state memory devices based on photocurrent in Bi(0.9)Eu(0.1)FeO(3)/La(0.67)Sr(0.33)MnO(3)/PMN-PT heterostructures |
title_sort | electro–opto–mechano driven reversible multi-state memory devices based on photocurrent in bi(0.9)eu(0.1)feo(3)/la(0.67)sr(0.33)mno(3)/pmn-pt heterostructures |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052503/ https://www.ncbi.nlm.nih.gov/pubmed/35493661 http://dx.doi.org/10.1039/d0ra00725k |
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