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Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

Detalles Bibliográficos
Autores principales:	Chang, Hongliang, Liu, Zhetong, Yang, Shenyuan, Gao, Yaqi, Shan, Jingyuan, Liu, Bingyao, Sun, Jingyu, Chen, Zhaolong, Yan, Jianchang, Liu, Zhiqiang, Wang, Junxi, Gao, Peng, Li, Jinmin, Liu, Zhongfan, Wei, Tongbo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2022
Materias:	Author Correction
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054817/ https://www.ncbi.nlm.nih.gov/pubmed/35487891 http://dx.doi.org/10.1038/s41377-022-00802-y

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