Cobalt doped BiVO(4) with rich oxygen vacancies for efficient photoelectrochemical water oxidation

A facile electrodeposition method was developed to prepare Co-BiVO(4) thin films with rich oxygen vacancies. The resulting photoanode exhibited a photocurrent density of 3.5 mA cm(−2) 1.23 V (vs. reversible hydrogen electrode (RHE), AM 1.5 G), which is over two times higher than that of undoped BiVO...

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Detalles Bibliográficos
Autores principales: Liu, Guoquan, Li, Fei, Zhu, Yong, Li, Jiayuan, Sun, Licheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9055882/
https://www.ncbi.nlm.nih.gov/pubmed/35520082
http://dx.doi.org/10.1039/d0ra01961e
Descripción
Sumario:A facile electrodeposition method was developed to prepare Co-BiVO(4) thin films with rich oxygen vacancies. The resulting photoanode exhibited a photocurrent density of 3.5 mA cm(−2) 1.23 V (vs. reversible hydrogen electrode (RHE), AM 1.5 G), which is over two times higher than that of undoped BiVO(4).

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