Cobalt doped BiVO(4) with rich oxygen vacancies for efficient photoelectrochemical water oxidation

A facile electrodeposition method was developed to prepare Co-BiVO(4) thin films with rich oxygen vacancies. The resulting photoanode exhibited a photocurrent density of 3.5 mA cm(−2) 1.23 V (vs. reversible hydrogen electrode (RHE), AM 1.5 G), which is over two times higher than that of undoped BiVO...

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Detalles Bibliográficos
Autores principales: Liu, Guoquan, Li, Fei, Zhu, Yong, Li, Jiayuan, Sun, Licheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9055882/
https://www.ncbi.nlm.nih.gov/pubmed/35520082
http://dx.doi.org/10.1039/d0ra01961e
_version_ 1784697512647458816
author Liu, Guoquan
Li, Fei
Zhu, Yong
Li, Jiayuan
Sun, Licheng
author_facet Liu, Guoquan
Li, Fei
Zhu, Yong
Li, Jiayuan
Sun, Licheng
author_sort Liu, Guoquan
collection PubMed
description A facile electrodeposition method was developed to prepare Co-BiVO(4) thin films with rich oxygen vacancies. The resulting photoanode exhibited a photocurrent density of 3.5 mA cm(−2) 1.23 V (vs. reversible hydrogen electrode (RHE), AM 1.5 G), which is over two times higher than that of undoped BiVO(4).
format Online
Article
Text
id pubmed-9055882
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher The Royal Society of Chemistry
record_format MEDLINE/PubMed
spelling pubmed-90558822022-05-04 Cobalt doped BiVO(4) with rich oxygen vacancies for efficient photoelectrochemical water oxidation Liu, Guoquan Li, Fei Zhu, Yong Li, Jiayuan Sun, Licheng RSC Adv Chemistry A facile electrodeposition method was developed to prepare Co-BiVO(4) thin films with rich oxygen vacancies. The resulting photoanode exhibited a photocurrent density of 3.5 mA cm(−2) 1.23 V (vs. reversible hydrogen electrode (RHE), AM 1.5 G), which is over two times higher than that of undoped BiVO(4). The Royal Society of Chemistry 2020-08-03 /pmc/articles/PMC9055882/ /pubmed/35520082 http://dx.doi.org/10.1039/d0ra01961e Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Liu, Guoquan
Li, Fei
Zhu, Yong
Li, Jiayuan
Sun, Licheng
Cobalt doped BiVO(4) with rich oxygen vacancies for efficient photoelectrochemical water oxidation
title Cobalt doped BiVO(4) with rich oxygen vacancies for efficient photoelectrochemical water oxidation
title_full Cobalt doped BiVO(4) with rich oxygen vacancies for efficient photoelectrochemical water oxidation
title_fullStr Cobalt doped BiVO(4) with rich oxygen vacancies for efficient photoelectrochemical water oxidation
title_full_unstemmed Cobalt doped BiVO(4) with rich oxygen vacancies for efficient photoelectrochemical water oxidation
title_short Cobalt doped BiVO(4) with rich oxygen vacancies for efficient photoelectrochemical water oxidation
title_sort cobalt doped bivo(4) with rich oxygen vacancies for efficient photoelectrochemical water oxidation
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9055882/
https://www.ncbi.nlm.nih.gov/pubmed/35520082
http://dx.doi.org/10.1039/d0ra01961e
work_keys_str_mv AT liuguoquan cobaltdopedbivo4withrichoxygenvacanciesforefficientphotoelectrochemicalwateroxidation
AT lifei cobaltdopedbivo4withrichoxygenvacanciesforefficientphotoelectrochemicalwateroxidation
AT zhuyong cobaltdopedbivo4withrichoxygenvacanciesforefficientphotoelectrochemicalwateroxidation
AT lijiayuan cobaltdopedbivo4withrichoxygenvacanciesforefficientphotoelectrochemicalwateroxidation
AT sunlicheng cobaltdopedbivo4withrichoxygenvacanciesforefficientphotoelectrochemicalwateroxidation

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