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Gas-phase reaction mechanism in chemical dry etching using NF(3) and remotely discharged NH(3)/N(2) mixture

Modeling of dry etching processes requires a detailed understanding of the relevant reaction mechanisms. This study aims to elucidate the gas-phase mechanism of reactions in the chemical dry etching process of SiO(2) layers which is initiated by mixing NF(3) gas with the discharged flow of an NH(3)/...

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Detalles Bibliográficos
Autores principales: Matsugi, Akira, Kubota, Shiro, Funato, Yuichi, Miura, Yutaka, Tonari, Kazuhiko
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056326/
https://www.ncbi.nlm.nih.gov/pubmed/35516038
http://dx.doi.org/10.1039/d0ra05726f

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