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Gas-phase reaction mechanism in chemical dry etching using NF(3) and remotely discharged NH(3)/N(2) mixture
Modeling of dry etching processes requires a detailed understanding of the relevant reaction mechanisms. This study aims to elucidate the gas-phase mechanism of reactions in the chemical dry etching process of SiO(2) layers which is initiated by mixing NF(3) gas with the discharged flow of an NH(3)/...
Autores principales: | Matsugi, Akira, Kubota, Shiro, Funato, Yuichi, Miura, Yutaka, Tonari, Kazuhiko |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056326/ https://www.ncbi.nlm.nih.gov/pubmed/35516038 http://dx.doi.org/10.1039/d0ra05726f |
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