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Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface
Epitaxial integration of transition-metal oxides with silicon brings a variety of functional properties to the well-established platform of electronic components. In this process, deoxidation and passivation of the silicon surface are one of the most important steps, which in our study were controll...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056433/ https://www.ncbi.nlm.nih.gov/pubmed/35520684 http://dx.doi.org/10.1039/d0ra06548j |
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author | Jovanović, Zoran Gauquelin, Nicolas Koster, Gertjan Rubio-Zuazo, Juan Ghosez, Philippe Verbeeck, Johan Suvorov, Danilo Spreitzer, Matjaž |
author_facet | Jovanović, Zoran Gauquelin, Nicolas Koster, Gertjan Rubio-Zuazo, Juan Ghosez, Philippe Verbeeck, Johan Suvorov, Danilo Spreitzer, Matjaž |
author_sort | Jovanović, Zoran |
collection | PubMed |
description | Epitaxial integration of transition-metal oxides with silicon brings a variety of functional properties to the well-established platform of electronic components. In this process, deoxidation and passivation of the silicon surface are one of the most important steps, which in our study were controlled by an ultra-thin layer of SrO and monitored by using transmission electron microscopy (TEM), electron energy-loss spectroscopy (EELS), synchrotron X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED) methods. Results revealed that an insufficient amount of SrO leads to uneven deoxidation of the silicon surface i.e. formation of pits and islands, whereas the composition of the as-formed heterostructure gradually changes from strontium silicide at the interface with silicon, to strontium silicate and SrO in the topmost layer. Epitaxial ordering of SrO, occurring simultaneously with silicon deoxidation, was observed. RHEED analysis has identified that SrO is epitaxially aligned with the (001) Si substrate both with SrO (001) and SrO (111) out-of-plane directions. This observation was discussed from the point of view of SrO desorption, SrO-induced deoxidation of the Si (001) surface and other interfacial reactions as well as structural ordering of deposited SrO. Results of the study present an important milestone in understanding subsequent epitaxial integration of functional oxides with silicon using SrO. |
format | Online Article Text |
id | pubmed-9056433 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | The Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-90564332022-05-04 Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface Jovanović, Zoran Gauquelin, Nicolas Koster, Gertjan Rubio-Zuazo, Juan Ghosez, Philippe Verbeeck, Johan Suvorov, Danilo Spreitzer, Matjaž RSC Adv Chemistry Epitaxial integration of transition-metal oxides with silicon brings a variety of functional properties to the well-established platform of electronic components. In this process, deoxidation and passivation of the silicon surface are one of the most important steps, which in our study were controlled by an ultra-thin layer of SrO and monitored by using transmission electron microscopy (TEM), electron energy-loss spectroscopy (EELS), synchrotron X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED) methods. Results revealed that an insufficient amount of SrO leads to uneven deoxidation of the silicon surface i.e. formation of pits and islands, whereas the composition of the as-formed heterostructure gradually changes from strontium silicide at the interface with silicon, to strontium silicate and SrO in the topmost layer. Epitaxial ordering of SrO, occurring simultaneously with silicon deoxidation, was observed. RHEED analysis has identified that SrO is epitaxially aligned with the (001) Si substrate both with SrO (001) and SrO (111) out-of-plane directions. This observation was discussed from the point of view of SrO desorption, SrO-induced deoxidation of the Si (001) surface and other interfacial reactions as well as structural ordering of deposited SrO. Results of the study present an important milestone in understanding subsequent epitaxial integration of functional oxides with silicon using SrO. The Royal Society of Chemistry 2020-08-24 /pmc/articles/PMC9056433/ /pubmed/35520684 http://dx.doi.org/10.1039/d0ra06548j Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/ |
spellingShingle | Chemistry Jovanović, Zoran Gauquelin, Nicolas Koster, Gertjan Rubio-Zuazo, Juan Ghosez, Philippe Verbeeck, Johan Suvorov, Danilo Spreitzer, Matjaž Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface |
title | Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface |
title_full | Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface |
title_fullStr | Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface |
title_full_unstemmed | Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface |
title_short | Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface |
title_sort | simultaneous heteroepitaxial growth of sro (001) and sro (111) during strontium-assisted deoxidation of the si (001) surface |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056433/ https://www.ncbi.nlm.nih.gov/pubmed/35520684 http://dx.doi.org/10.1039/d0ra06548j |
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