Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency

Efficient CH(3)NH(3)PbI(3) photodetectors (PDs) with an extremely high gain of the maximum external quantum efficiency (EQE) of 140 000% within the ultraviolet region to the near infrared region (NIR) and an extremely high responsivity (R) under a low bias of −5 V were successfully fabricated. The f...

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Detalles Bibliográficos
Autores principales: Zhao, Xinyu, Huang, Lixiang, Wang, Yukun, Zhu, Xinglin, Li, Lei, Li, Guoxin, Sun, Wenhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056631/
https://www.ncbi.nlm.nih.gov/pubmed/35516470
http://dx.doi.org/10.1039/d0ra06618d
Descripción
Sumario:Efficient CH(3)NH(3)PbI(3) photodetectors (PDs) with an extremely high gain of the maximum external quantum efficiency (EQE) of 140 000% within the ultraviolet region to the near infrared region (NIR) and an extremely high responsivity (R) under a low bias of −5 V were successfully fabricated. The fabricated devices manifested outstanding environmental stability with only 10% degradation of EQE after being exposed to air for 24 h. These obtained results indicate the promising potential of perovskite PDs for visible light communication applications.

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