Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency

Efficient CH(3)NH(3)PbI(3) photodetectors (PDs) with an extremely high gain of the maximum external quantum efficiency (EQE) of 140 000% within the ultraviolet region to the near infrared region (NIR) and an extremely high responsivity (R) under a low bias of −5 V were successfully fabricated. The f...

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Detalles Bibliográficos
Autores principales: Zhao, Xinyu, Huang, Lixiang, Wang, Yukun, Zhu, Xinglin, Li, Lei, Li, Guoxin, Sun, Wenhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056631/
https://www.ncbi.nlm.nih.gov/pubmed/35516470
http://dx.doi.org/10.1039/d0ra06618d
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author Zhao, Xinyu
Huang, Lixiang
Wang, Yukun
Zhu, Xinglin
Li, Lei
Li, Guoxin
Sun, Wenhong
author_facet Zhao, Xinyu
Huang, Lixiang
Wang, Yukun
Zhu, Xinglin
Li, Lei
Li, Guoxin
Sun, Wenhong
author_sort Zhao, Xinyu
collection PubMed
description Efficient CH(3)NH(3)PbI(3) photodetectors (PDs) with an extremely high gain of the maximum external quantum efficiency (EQE) of 140 000% within the ultraviolet region to the near infrared region (NIR) and an extremely high responsivity (R) under a low bias of −5 V were successfully fabricated. The fabricated devices manifested outstanding environmental stability with only 10% degradation of EQE after being exposed to air for 24 h. These obtained results indicate the promising potential of perovskite PDs for visible light communication applications.
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spelling pubmed-90566312022-05-04 Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency Zhao, Xinyu Huang, Lixiang Wang, Yukun Zhu, Xinglin Li, Lei Li, Guoxin Sun, Wenhong RSC Adv Chemistry Efficient CH(3)NH(3)PbI(3) photodetectors (PDs) with an extremely high gain of the maximum external quantum efficiency (EQE) of 140 000% within the ultraviolet region to the near infrared region (NIR) and an extremely high responsivity (R) under a low bias of −5 V were successfully fabricated. The fabricated devices manifested outstanding environmental stability with only 10% degradation of EQE after being exposed to air for 24 h. These obtained results indicate the promising potential of perovskite PDs for visible light communication applications. The Royal Society of Chemistry 2020-09-04 /pmc/articles/PMC9056631/ /pubmed/35516470 http://dx.doi.org/10.1039/d0ra06618d Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/
spellingShingle Chemistry
Zhao, Xinyu
Huang, Lixiang
Wang, Yukun
Zhu, Xinglin
Li, Lei
Li, Guoxin
Sun, Wenhong
Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency
title Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency
title_full Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency
title_fullStr Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency
title_full_unstemmed Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency
title_short Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency
title_sort interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056631/
https://www.ncbi.nlm.nih.gov/pubmed/35516470
http://dx.doi.org/10.1039/d0ra06618d
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