Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices

We report on the structural, electrical, and transport properties of high quality CVD-fabricated n-GaN nanorods (NRs)/p-Si heterojunction diodes. The X-ray diffraction (XRD) studies reveal the growth of hexagonal wurtzite GaN structure. The current–voltage (I–V) characteristics of the n-GaN NRs/p-Si...

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Detalles Bibliográficos
Autores principales: Saron, K. M. A., Hashim, M. R., Ibrahim, M., Yahyaoui, M., Allam, Nageh K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056698/
https://www.ncbi.nlm.nih.gov/pubmed/35515063
http://dx.doi.org/10.1039/d0ra05973k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056698/
https://www.ncbi.nlm.nih.gov/pubmed/35515063
http://dx.doi.org/10.1039/d0ra05973k

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