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Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices
We report on the structural, electrical, and transport properties of high quality CVD-fabricated n-GaN nanorods (NRs)/p-Si heterojunction diodes. The X-ray diffraction (XRD) studies reveal the growth of hexagonal wurtzite GaN structure. The current–voltage (I–V) characteristics of the n-GaN NRs/p-Si...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056698/ https://www.ncbi.nlm.nih.gov/pubmed/35515063 http://dx.doi.org/10.1039/d0ra05973k |