A high-precision, template-assisted, anisotropic wet etching method for fabricating perovskite microstructure arrays

Cesium lead-halide (CsPbX(3); X = Cl, Br, I) perovskite microstructure arrays have become the basis for laser array applications, due to their outstanding spectral coherence, low threshold, and wideband tunability. Furthermore, the common fabrication methods for these arrays have the limitation to achieve both tailored design and high resolution simultaneously. Herein, we report a high-precision, template-assisted, wet etching (TAWE) method for the preparation of perovskite microstructure arrays. This method possesses the advantages of flexible design, controllable size, and ultrahigh accuracy (the resolution can reach 1 μm or higher). A 20 × 20 inverted pyramid array with a diameter of 3 μm and a period of 4 μm was fabricated using this method. CsPbBr(3) perovskite quantum dots fabricated by means of hot injection were filled into the inverted pyramid array via spin-coating and pumped using a laser with a wavelength of 400 nm. The lasing characteristics of the array were then measured and analyzed; the threshold was measured to be 37.6 μJ cm(−2), and the full width at half maximum of the amplified spontaneous emission spectrum was found to be about 4.7 nm. These results demonstrate that perovskite microstructure arrays prepared via this method have potential applications in laser arrays.