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Structural, electronic and optical properties of pristine and functionalized MgO monolayers: a first principles study

In this paper, we present a detailed investigation of the structural, electronic, and optical properties of pristine, nitrogenated, and fluorinated MgO monolayers using ab initio calculations. The two dimensional (2D) material stability is confirmed by the phonon dispersion curves and binding energi...

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Detalles Bibliográficos
Autores principales: Hoat, D. M., Van On, Vo, Nguyen, Duy Khanh, Naseri, Mosayeb, Ponce-Pérez, R., Vu, Tuan V., Rivas-Silva, J. F., Hieu, Nguyen N., Cocoletzi, Gregorio H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9057461/
https://www.ncbi.nlm.nih.gov/pubmed/35520824
http://dx.doi.org/10.1039/d0ra05030j
Descripción
Sumario:In this paper, we present a detailed investigation of the structural, electronic, and optical properties of pristine, nitrogenated, and fluorinated MgO monolayers using ab initio calculations. The two dimensional (2D) material stability is confirmed by the phonon dispersion curves and binding energies. Full functionalization causes notable changes in the monolayer structure and slightly reduces the chemical stability. The simulations predict that the MgO single layer is an indirect semiconductor with an energy gap of 3.481 (4.693) eV as determined by the GGA-PBE (HSE06) functional. The electronic structure of the MgO monolayer exhibits high sensitivity to chemical functionalization. Specifically, nitrogenation induces metallization of the MgO monolayer, while an indirect–direct band gap transition and band gap reduction of 81.34 (59.96)% are achieved by means of fluorination. Consequently, the functionalized single layers display strong optical absorption in the infrared and visible regimes. The results suggest that full nitrogenation and fluorination may be a quite effective approach to enhance the optoelectronic properties of the MgO monolayer for application in nano-devices.