Cargando…
Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering
Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties. Triggered by the growing demand for developing nano-electronic devices, strain engineering...
Autores principales: | Yan, Yalan, Ding, Shuang, Wu, Xiaonan, Zhu, Jian, Feng, Dengman, Yang, Xiaodong, Li, Fangfei |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9057462/ https://www.ncbi.nlm.nih.gov/pubmed/35515419 http://dx.doi.org/10.1039/d0ra07288e |
Ejemplares similares
-
Tuning electronic properties of transition-metal dichalcogenides via defect charge
por: Aghajanian, Martik, et al.
Publicado: (2018) -
Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides
por: Durán Retamal, José Ramón, et al.
Publicado: (2018) -
Transition metal dichalcogenide electrodes with interface engineering for high-performance hybrid supercapacitors
por: Iqbal, Muhammad Zahir, et al.
Publicado: (2023) -
Transition metal dichalcogenide magnetic atomic chains
por: Zhang, Kai, et al.
Publicado: (2022) -
Hyperfine interaction in atomically thin transition metal dichalcogenides
por: Avdeev, Ivan D., et al.
Publicado: (2019)