Synthesis and characterization of Mg-doped ZnO thin-films electrochemically grown on FTO substrates for optoelectronic applications

Mg-doped ZnO (MZO) thin films were successfully fabricated on fluorine-doped tin-oxide (FTO)-coated glass substrates by an electrochemical deposition method using aqueous electrolytes of 80 mM Zn(NO(3))(2) with different concentrations of Mg(NO(3))(2). The effects of Mg doping concentration on the electronic, microstructural, morphological, optical and electrical properties of the prepared films were investigated. The results of the Mott–Schottky (M–S) analysis revealed that the charge carrier density of n-type MZO films increases considerably when increasing the amount of Mg. As Mg concentration increased the Fermi level energy was also found to be increased by inclusion of Mg doping, which was confirmed by negative shifting of the flat band potential. XRD analysis showed that both undoped and Mg-doped ZnO thin films have a polycrystalline nature and hexagonal wurtzite structure with preferential orientation along the (002) axis. It is evident that the intensity of the (002) peak decreased with increasing Mg concentration. From scanning electron microscopy (SEM) analysis, it was found that when the amount of Mg concentration was increased in the solution, a decrease in the size of the grains was observed. The optical transmittance was found to be very high (∼85%) in the visible region of the solar spectrum. When the Mg content in the ZnO system was increased, a blue shifting of the absorption edge of the films was observed. The result of I–V measurements showed that the Mg doping was found to lead to an enhancement of the electrical properties of MZO thin films and the design of high-performance transparent conductive oxide (TCO) material.