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Resistance state evolution under constant electric stress on a MoS(2) non-volatile resistive switching device
MoS(2) has been reported to exhibit a resistive switching phenomenon in a vertical metal–insulator–metal (MIM) structure and has attracted much attention due to its ultra-thin active layer thickness. Here, the resistance evolutions in the high resistance state (HRS) and low resistance state (LRS) ar...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9057845/ https://www.ncbi.nlm.nih.gov/pubmed/35516745 http://dx.doi.org/10.1039/d0ra05209d |