Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor

Inorganic halide perovskite quantum dots (IHP QDs) have been widely studied in optoelectronic devices because of their size-dependent tunable bandgaps, long electron–hole diffusion lengths and excellent absorption properties. Herein, a novel floating-gate organic field-effect transistor memory (FGOF...

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Detalles Bibliográficos
Autores principales: Jin, Risheng, Wang, Jin, Shi, Keli, Qiu, Beibei, Ma, Lanchao, Huang, Shihua, Li, Zhengquan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9058139/
https://www.ncbi.nlm.nih.gov/pubmed/35514915
http://dx.doi.org/10.1039/d0ra08021g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9058139/
https://www.ncbi.nlm.nih.gov/pubmed/35514915
http://dx.doi.org/10.1039/d0ra08021g

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