Strain-enhanced giant Rashba spin splitting in ultrathin KTaO(3) films for spin-polarized photocurrents

Strong Rashba effects at semiconductor surfaces and interfaces have attracted great attention for basic scientific exploration and practical applications. Here, we show through first-principles investigation that applying biaxial stress can cause tunable and giant Rashba effects in ultrathin KTaO(3) (KTO) (001) films with the most stable surfaces. When increasing the in-plane compressive strain to −5%, the Rashba spin splitting energy reaches E(R) = 140 meV, corresponding to the Rashba coupling constant α(R) = 1.3 eV Å. We investigate its strain-dependent crystal structures, energy bands, and related properties, and thereby elucidate the mechanism for the giant Rashba effects. Further calculations show that the giant Rashba spin splitting can remain or be enhanced when capping layer and/or Si substrate are added, and a SrTiO(3) capping can make the Rashba spin splitting energy reach the record 190 meV. Furthermore, it is elucidated that strong circular photogalvanic effect can be achieved for spin-polarized photocurrents in the KTO thin films or related heterostructures, which is promising for future spintronic and optoelectronic applications.