Cargando…
Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector
An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier c...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059378/ https://www.ncbi.nlm.nih.gov/pubmed/35521590 http://dx.doi.org/10.1039/c8ra08803a |
| Sumario: | An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on–off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10(4), with a photoresponsivity of 1.9 × 10(−2) A W(−1), as well as a rejection ratio of 2.68 × 10(4) at a voltage bias of 10 V. |
|---|