Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier c...

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Detalles Bibliográficos
Autores principales: Chen, Kuan-Yin, Chang, Sheng-Po, Lin, Chih-hung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059378/
https://www.ncbi.nlm.nih.gov/pubmed/35521590
http://dx.doi.org/10.1039/c8ra08803a
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author Chen, Kuan-Yin
Chang, Sheng-Po
Lin, Chih-hung
author_facet Chen, Kuan-Yin
Chang, Sheng-Po
Lin, Chih-hung
author_sort Chen, Kuan-Yin
collection PubMed
description An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on–off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10(4), with a photoresponsivity of 1.9 × 10(−2) A W(−1), as well as a rejection ratio of 2.68 × 10(4) at a voltage bias of 10 V.
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spelling pubmed-90593782022-05-04 Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector Chen, Kuan-Yin Chang, Sheng-Po Lin, Chih-hung RSC Adv Chemistry An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on–off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10(4), with a photoresponsivity of 1.9 × 10(−2) A W(−1), as well as a rejection ratio of 2.68 × 10(4) at a voltage bias of 10 V. The Royal Society of Chemistry 2018-12-20 /pmc/articles/PMC9059378/ /pubmed/35521590 http://dx.doi.org/10.1039/c8ra08803a Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Chen, Kuan-Yin
Chang, Sheng-Po
Lin, Chih-hung
Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector
title Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector
title_full Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector
title_fullStr Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector
title_full_unstemmed Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector
title_short Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector
title_sort effect of oxygen vacancy concentration on indium tungsten oxide uv-a photodetector
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059378/
https://www.ncbi.nlm.nih.gov/pubmed/35521590
http://dx.doi.org/10.1039/c8ra08803a
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