Low temperature atomic layer deposition of zirconium oxide for inkjet printed transistor applications

We report the growth of zirconium oxide (ZrO(2)) as a high-k gate dielectric for an inkjet-printed transistor using a low-temperature atomic layer deposition (ALD) from tetrakis(dimethylamido)zirconium (TDMAZr) and water precursors. All the samples are deposited at low-temperature ranges of 150–250...

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Detalles Bibliográficos
Autores principales: Jewel, Mohi Uddin, Mahmud, MD Shamim, Monne, Mahmuda Akter, Zakhidov, Alex, Chen, Maggie Yihong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059772/
https://www.ncbi.nlm.nih.gov/pubmed/35516157
http://dx.doi.org/10.1039/c8ra08470j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059772/
https://www.ncbi.nlm.nih.gov/pubmed/35516157
http://dx.doi.org/10.1039/c8ra08470j

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