Morphology controlling of 〈111〉-3C–SiC films by HMDS flow rate in LCVD

Morphology of 〈111〉-oriented 3C–SiC films was transformed from mosaic to whisker to cauliflower-like with the increased flow rate (f) of hexametyldisilane (HMDS) in the process of laser chemical vapor deposition (LCVD). The SiC whiskers were naturally sharp hexagonal pyramids with average height of...

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Detalles Bibliográficos
Autores principales: Xu, Qingfang, Tu, Rong, Sun, Qingyun, Yang, Meijun, Li, Qizhong, Zhang, Song, Zhang, Lianmeng, Goto, Takashi, Ohmori, Hitoshi, Shi, Ji, Li, Haiwen, Kosinova, Marina, Bikramjit, Basu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059850/
https://www.ncbi.nlm.nih.gov/pubmed/35520524
http://dx.doi.org/10.1039/c8ra09509d
Descripción
Sumario:Morphology of 〈111〉-oriented 3C–SiC films was transformed from mosaic to whisker to cauliflower-like with the increased flow rate (f) of hexametyldisilane (HMDS) in the process of laser chemical vapor deposition (LCVD). The SiC whiskers were naturally sharp hexagonal pyramids with average height of 250 nm and an aspect ratio in the range of 5 to 10, with a density of 1.3 × 10(8) mm(−2). The influence mechanism of f on the surface morphology, as well as the growth mechanism of SiC whiskers, was discussed.

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