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Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects

The defect-enhanced resistive switching behavior of Cr-doped ZnO films was investigated in this study, and evidence that the switching effect can be attributed to defects was found. X-ray photoelectron spectroscopy demonstrated the existence of oxygen vacancies in the ZnO-based films, and the concen...

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Detalles Bibliográficos
Autores principales: Li, Sih-Sian, Su, Yan-Kuin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059967/
https://www.ncbi.nlm.nih.gov/pubmed/35518991
http://dx.doi.org/10.1039/c8ra10112d
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author Li, Sih-Sian
Su, Yan-Kuin
author_facet Li, Sih-Sian
Su, Yan-Kuin
author_sort Li, Sih-Sian
collection PubMed
description The defect-enhanced resistive switching behavior of Cr-doped ZnO films was investigated in this study, and evidence that the switching effect can be attributed to defects was found. X-ray photoelectron spectroscopy demonstrated the existence of oxygen vacancies in the ZnO-based films, and the concentration of oxygen vacancies in the Cr-doped ZnO film was larger than that in the undoped ZnO film, which can be attributed to Cr doping. We concluded that the defects in Cr-doped ZnO were due to the Cr dopant, leading to excellent performance of Cr-doped ZnO films. In particular, depth-profiling analysis of the X-ray photoelectron spectra demonstrated that the resistive switching effects corresponded to variations in the concentration of the defects. The results confirmed that oxygen vacancies are crucial for the entire class of resistive switching effects in Cr-doped ZnO films. In particular, the Cr-doped ZnO films not only show bipolar resistive switching behavior but also excellent reliability and stability, which should be beneficial for next-generation memory device applications.
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spelling pubmed-90599672022-05-04 Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects Li, Sih-Sian Su, Yan-Kuin RSC Adv Chemistry The defect-enhanced resistive switching behavior of Cr-doped ZnO films was investigated in this study, and evidence that the switching effect can be attributed to defects was found. X-ray photoelectron spectroscopy demonstrated the existence of oxygen vacancies in the ZnO-based films, and the concentration of oxygen vacancies in the Cr-doped ZnO film was larger than that in the undoped ZnO film, which can be attributed to Cr doping. We concluded that the defects in Cr-doped ZnO were due to the Cr dopant, leading to excellent performance of Cr-doped ZnO films. In particular, depth-profiling analysis of the X-ray photoelectron spectra demonstrated that the resistive switching effects corresponded to variations in the concentration of the defects. The results confirmed that oxygen vacancies are crucial for the entire class of resistive switching effects in Cr-doped ZnO films. In particular, the Cr-doped ZnO films not only show bipolar resistive switching behavior but also excellent reliability and stability, which should be beneficial for next-generation memory device applications. The Royal Society of Chemistry 2019-01-22 /pmc/articles/PMC9059967/ /pubmed/35518991 http://dx.doi.org/10.1039/c8ra10112d Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Li, Sih-Sian
Su, Yan-Kuin
Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects
title Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects
title_full Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects
title_fullStr Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects
title_full_unstemmed Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects
title_short Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects
title_sort improvement of the performance in cr-doped zno memory devices via control of oxygen defects
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059967/
https://www.ncbi.nlm.nih.gov/pubmed/35518991
http://dx.doi.org/10.1039/c8ra10112d
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AT suyankuin improvementoftheperformanceincrdopedznomemorydevicesviacontrolofoxygendefects