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Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects
The defect-enhanced resistive switching behavior of Cr-doped ZnO films was investigated in this study, and evidence that the switching effect can be attributed to defects was found. X-ray photoelectron spectroscopy demonstrated the existence of oxygen vacancies in the ZnO-based films, and the concen...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059967/ https://www.ncbi.nlm.nih.gov/pubmed/35518991 http://dx.doi.org/10.1039/c8ra10112d |