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Influence of cooling-induced edge morphology evolution during chemical vapor deposition on H(2) etching of graphene domains

In this paper, we studied the influence of edge morphology evolution during the chemical vapor deposition cooling process on H(2) etching of graphene domains. Hexagonal graphene domains were synthesized on a Cu substrate and etched with H(2) at atmospheric pressure. After etching, two kinds of graph...

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Detalles Bibliográficos
Autores principales: Wang, Bin, Wang, Yuwei, Wang, Guiqiang, Zhang, Qingguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9060803/
https://www.ncbi.nlm.nih.gov/pubmed/35515905
http://dx.doi.org/10.1039/c8ra09265f

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