Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO

In this study, poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized through the Suzuki reaction, and it was characterized. A sandwich type memory device based on PFO and PFO:ZnO, was fabricated using rotary-coating technology. I–V characteristics of the device were studied, and the effects of Zn...

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Detalles Bibliográficos
Autores principales: Huang, Jiahe, Zhao, Xiaofeng, Zhang, Hongyan, Bai, Ju, Wang, Shuhong, Wang, Cheng, Ma, Dongge, Hou, Yanjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9062018/
https://www.ncbi.nlm.nih.gov/pubmed/35520703
http://dx.doi.org/10.1039/c9ra00405j
Descripción
Sumario:In this study, poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized through the Suzuki reaction, and it was characterized. A sandwich type memory device based on PFO and PFO:ZnO, was fabricated using rotary-coating technology. I–V characteristics of the device were studied, and the effects of ZnO nanoparticle (NP) doping content on the performances of the device were discussed. The best doping content of ZnO NPs was found by processing the experimental results (4.76 wt%). Also, the stability of the device was tested, and it was found that the device remained stable after a long testing period. Furthermore, the switching mechanism of the device was discussed.

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