Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO

In this study, poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized through the Suzuki reaction, and it was characterized. A sandwich type memory device based on PFO and PFO:ZnO, was fabricated using rotary-coating technology. I–V characteristics of the device were studied, and the effects of Zn...

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Detalles Bibliográficos
Autores principales: Huang, Jiahe, Zhao, Xiaofeng, Zhang, Hongyan, Bai, Ju, Wang, Shuhong, Wang, Cheng, Ma, Dongge, Hou, Yanjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9062018/
https://www.ncbi.nlm.nih.gov/pubmed/35520703
http://dx.doi.org/10.1039/c9ra00405j
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author Huang, Jiahe
Zhao, Xiaofeng
Zhang, Hongyan
Bai, Ju
Wang, Shuhong
Wang, Cheng
Ma, Dongge
Hou, Yanjun
author_facet Huang, Jiahe
Zhao, Xiaofeng
Zhang, Hongyan
Bai, Ju
Wang, Shuhong
Wang, Cheng
Ma, Dongge
Hou, Yanjun
author_sort Huang, Jiahe
collection PubMed
description In this study, poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized through the Suzuki reaction, and it was characterized. A sandwich type memory device based on PFO and PFO:ZnO, was fabricated using rotary-coating technology. I–V characteristics of the device were studied, and the effects of ZnO nanoparticle (NP) doping content on the performances of the device were discussed. The best doping content of ZnO NPs was found by processing the experimental results (4.76 wt%). Also, the stability of the device was tested, and it was found that the device remained stable after a long testing period. Furthermore, the switching mechanism of the device was discussed.
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spelling pubmed-90620182022-05-04 Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO Huang, Jiahe Zhao, Xiaofeng Zhang, Hongyan Bai, Ju Wang, Shuhong Wang, Cheng Ma, Dongge Hou, Yanjun RSC Adv Chemistry In this study, poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized through the Suzuki reaction, and it was characterized. A sandwich type memory device based on PFO and PFO:ZnO, was fabricated using rotary-coating technology. I–V characteristics of the device were studied, and the effects of ZnO nanoparticle (NP) doping content on the performances of the device were discussed. The best doping content of ZnO NPs was found by processing the experimental results (4.76 wt%). Also, the stability of the device was tested, and it was found that the device remained stable after a long testing period. Furthermore, the switching mechanism of the device was discussed. The Royal Society of Chemistry 2019-03-27 /pmc/articles/PMC9062018/ /pubmed/35520703 http://dx.doi.org/10.1039/c9ra00405j Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Huang, Jiahe
Zhao, Xiaofeng
Zhang, Hongyan
Bai, Ju
Wang, Shuhong
Wang, Cheng
Ma, Dongge
Hou, Yanjun
Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO
title Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO
title_full Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO
title_fullStr Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO
title_full_unstemmed Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO
title_short Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO
title_sort flash memory devices and bistable nonvolatile resistance switching properties based on pfo doping with zno
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9062018/
https://www.ncbi.nlm.nih.gov/pubmed/35520703
http://dx.doi.org/10.1039/c9ra00405j
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