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MAPbBr(3) perovskite solar cells via a two-step deposition process

Organometal halide perovskite solar cells are becoming one of the most competitive emerging technologies. They have reached a power conversion efficiency (PCE) of 22.7% in 10 years. Their high efficiency and simple fabrication process render perovskite solar cells a promising player in the field of...

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Detalles Bibliográficos
Autores principales: Mehdi, Hanadi, Mhamdi, Asya, Hannachi, Riadh, Bouazizi, Abdelaziz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9063812/
https://www.ncbi.nlm.nih.gov/pubmed/35520800
http://dx.doi.org/10.1039/c9ra02036e
Descripción
Sumario:Organometal halide perovskite solar cells are becoming one of the most competitive emerging technologies. They have reached a power conversion efficiency (PCE) of 22.7% in 10 years. Their high efficiency and simple fabrication process render perovskite solar cells a promising player in the field of third-generation photovoltaics. The deposition methods play an important role in the fabrication of a high quality films. In this paper, we report the preparation of methylammonium lead bromide (MAPbBr(3)) thin film using a two-step method based on the transformation of PbBr(2) into MAPbBr(3) perovskite after dipping in a MABr solution. The effects of the dipping time and the annealing time on the photovoltaic, optical and structural properties of the devices were studied. The dipping time treatments of the inorganic film in organic solution were conducted from 30 s to 15 min. The obtained result showed that the PCE of the devices was improved with the increase of dipping time. In addition, an increase of annealing time induces an enhancement of the perovskite properties. Furthermore, the as-fabricated perovskite solar cell dipped and annealed for 10 min exhibited the highest power conversion efficiency of 4.8% with a short circuit current density of 16.16 mA cm(−2), an open circuit voltage of 0.84 V, and a fill factor of 35.50.