Atomic layer deposition and tellurization of Ge–Sb film for phase-change memory applications

We studied the atomic layer deposition (ALD) and the tellurization of Ge–Sb films to prepare conformal crystalline Ge–Sb–Te (GST) films and to achieve void-free gap filling for emerging phase-change memory applications. ALD Ge–Sb film was prepared by alternating exposures to GeCl(2)-dioxane and Sb(S...

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Detalles Bibliográficos
Autores principales: Kim, Yewon, Han, Byeol, Kim, Yu-Jin, Shin, Jeeyoon, Kim, Seongyoon, Hidayat, Romel, Park, Jae-Min, Koh, Wonyong, Lee, Won-Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9064561/
https://www.ncbi.nlm.nih.gov/pubmed/35519870
http://dx.doi.org/10.1039/c9ra02188d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9064561/
https://www.ncbi.nlm.nih.gov/pubmed/35519870
http://dx.doi.org/10.1039/c9ra02188d

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