Cargando…
Significantly improved dielectric properties of multiwall carbon nanotube-BaTiO(3)/PVDF polymer composites by tuning the particle size of the ceramic filler
The effects of different BaTiO(3) sizes (≈100 nm (nBT) and 0.5–1.0 μm (μBT)) on the dielectric and electrical properties of multiwall carbon nanotube (CNT)-BT/poly(vinylidene fluoride) (PVDF) composites are investigated. The fabricated three-phase composites using 20 vol% BT with various CNT volume...
Autores principales: | , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9069331/ https://www.ncbi.nlm.nih.gov/pubmed/35530602 http://dx.doi.org/10.1039/c9ra04933a |
Sumario: | The effects of different BaTiO(3) sizes (≈100 nm (nBT) and 0.5–1.0 μm (μBT)) on the dielectric and electrical properties of multiwall carbon nanotube (CNT)-BT/poly(vinylidene fluoride) (PVDF) composites are investigated. The fabricated three-phase composites using 20 vol% BT with various CNT volume fractions (f(CNT)) are systematically characterized. The dielectric permittivity (ε′) of the CNT-nBT/PVDF and CNT-μBT/PVDF composites rapidly increases when f(CNT) > 0.015 and f(CNT) > 0.017, respectively. The former is accompanied by the dramatic increase in the loss tangent (tan δ) and conductivity (σ), but surprisingly, not for the latter. At 10(3) Hz, the low tan δ and σ values of the CNT-μBT/PVDF composite are about 0.06 and 6.82 × 10(−9) S cm(−1), while its ε′ value is greatly enhanced (≈154.6). The variation of the dielectric permittivity with f(CNT) for both composite systems follows the percolation model with percolation thresholds of f(c) = 0.018 and f(c) = 0.02, respectively. With further increasing f(CNT) to 0.02, ε′ is greatly increased to 253.8, while tan δ ≤ 0.1. Without μBT particles, the ε′ and tan δ values of the CNT/PVDF composite with f(CNT) = 0.02 are as high as ≈240 and >10(3), respectively. Greatly enhanced dielectric properties are described in detail. |
---|