High On/Off Ratio Spintronic Multi‐Level Memory Unit for Deep Neural Network (Adv. Sci. 13/2022)

Spintronic Multi‐Level Memory Unit In article number 2103357 by Kun Zhang, Yue Zhang, and co‐workers, a spintronic multi‐level memory unit (MLMU) with high on/off ratio is constructed by integrating a magnetic tunnel junction chain and a diode in parallel. This MLMU can enable high‐accuracy artifici...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhang, Kun, Jia, Xiaotao, Cao, Kaihua, Wang, Jinkai, Zhang, Yue, Lin, Kelian, Chen, Lei, Feng, Xueqiang, Zheng, Zhenyi, Zhang, Zhizhong, Zhang, Youguang, Zhao, Weisheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Back Cover
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9069362/
http://dx.doi.org/10.1002/advs.202270086
Descripción
Sumario:Spintronic Multi‐Level Memory Unit In article number 2103357 by Kun Zhang, Yue Zhang, and co‐workers, a spintronic multi‐level memory unit (MLMU) with high on/off ratio is constructed by integrating a magnetic tunnel junction chain and a diode in parallel. This MLMU can enable high‐accuracy artificial intelligence applications, such as a deep neural network accelerator for image classification. Just as described in the cover design, the MLMUs are regarded as building blocks to assemble the artificial‐intelligence brain. [Image: see text]

Ejemplares similares