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Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels
The three-dimensional thermal characteristics of micro-light-emitting diodes (μLEDs) on GaN and sapphire substrates were studied with forward-voltage methods, thermal transient measurements, and infrared thermal imaging. The μLEDs on the GaN substrate showed an approximately 10 °C lower junction tem...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9069823/ https://www.ncbi.nlm.nih.gov/pubmed/35527886 http://dx.doi.org/10.1039/c9ra04174e |
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author | Li, Chengcheng Chen, Zhizhong Jiao, Fei Zhan, Jinglin Chen, Yifan Chen, Yiyong Nie, Jingxin Zhao, Tongyang Kang, Xiangning Feng, Shiwei Zhang, Guoyi Shen, Bo |
author_facet | Li, Chengcheng Chen, Zhizhong Jiao, Fei Zhan, Jinglin Chen, Yifan Chen, Yiyong Nie, Jingxin Zhao, Tongyang Kang, Xiangning Feng, Shiwei Zhang, Guoyi Shen, Bo |
author_sort | Li, Chengcheng |
collection | PubMed |
description | The three-dimensional thermal characteristics of micro-light-emitting diodes (μLEDs) on GaN and sapphire substrates were studied with forward-voltage methods, thermal transient measurements, and infrared thermal imaging. The μLEDs on the GaN substrate showed an approximately 10 °C lower junction temperature and smaller amplitude of the K factors than those on the sapphire substrate under the current injection level of 4 kA cm(−2). The thermal transient measurement showed that the spreading thermal resistances of the mesa, the GaN epilayer, and the interface of the GaN/substrate were reduced significantly for μLEDs on the GaN substrate because of the high-quality GaN crystal and the homogeneous interfaces. The infrared thermal images showed lower total average junction temperatures and more uniform temperature distributions for the μLEDs on the GaN substrate, which were also simulated with APSYS software. The thermal transport mechanisms are discussed for the lateral and vertical directions in the μLEDs. |
format | Online Article Text |
id | pubmed-9069823 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | The Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-90698232022-05-05 Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels Li, Chengcheng Chen, Zhizhong Jiao, Fei Zhan, Jinglin Chen, Yifan Chen, Yiyong Nie, Jingxin Zhao, Tongyang Kang, Xiangning Feng, Shiwei Zhang, Guoyi Shen, Bo RSC Adv Chemistry The three-dimensional thermal characteristics of micro-light-emitting diodes (μLEDs) on GaN and sapphire substrates were studied with forward-voltage methods, thermal transient measurements, and infrared thermal imaging. The μLEDs on the GaN substrate showed an approximately 10 °C lower junction temperature and smaller amplitude of the K factors than those on the sapphire substrate under the current injection level of 4 kA cm(−2). The thermal transient measurement showed that the spreading thermal resistances of the mesa, the GaN epilayer, and the interface of the GaN/substrate were reduced significantly for μLEDs on the GaN substrate because of the high-quality GaN crystal and the homogeneous interfaces. The infrared thermal images showed lower total average junction temperatures and more uniform temperature distributions for the μLEDs on the GaN substrate, which were also simulated with APSYS software. The thermal transport mechanisms are discussed for the lateral and vertical directions in the μLEDs. The Royal Society of Chemistry 2019-08-05 /pmc/articles/PMC9069823/ /pubmed/35527886 http://dx.doi.org/10.1039/c9ra04174e Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/ |
spellingShingle | Chemistry Li, Chengcheng Chen, Zhizhong Jiao, Fei Zhan, Jinglin Chen, Yifan Chen, Yiyong Nie, Jingxin Zhao, Tongyang Kang, Xiangning Feng, Shiwei Zhang, Guoyi Shen, Bo Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels |
title | Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels |
title_full | Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels |
title_fullStr | Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels |
title_full_unstemmed | Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels |
title_short | Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels |
title_sort | effects of interfaces and current spreading on the thermal transport of micro-leds for ka-per-square-cm current injection levels |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9069823/ https://www.ncbi.nlm.nih.gov/pubmed/35527886 http://dx.doi.org/10.1039/c9ra04174e |
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