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Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals
In this study, multiphysics simulations were carried out to understand the convection mechanisms of the top seeded solution growth (TSSG) of SiC. Experimental melting tests and crystal growth were conducted to verify the simulation results in the growing temperatures between 1700 and 1900 °C with rf...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9070373/ https://www.ncbi.nlm.nih.gov/pubmed/35531043 http://dx.doi.org/10.1039/c9ra04930d |