Cargando…
Intermediate band solar cell materials through the doping of group-VA elements (N, P, As and Sb) in Cu(2)ZnSiSe(4)
The electronic structure and optical properties of group-VA (N, P, As, and Sb)-doped Cu(2)ZnSiSe(4) alloys have been studied using a hybrid functional through density functional theory calculations. The minor lattice distortion and small formation energy indicate that synthesis of these alloys is hi...
Autores principales: | Jibran, Muhammad, Sun, Xia, Wang, Bing, Yamauchi, Yasushi, Ding, Zejun |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9070995/ https://www.ncbi.nlm.nih.gov/pubmed/35530473 http://dx.doi.org/10.1039/c9ra06236j |
Ejemplares similares
-
Doping of Sb into Cu(2)ZnSn(S,Se)(4) absorber layer via Se&Sb(2)Se(3) co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells
por: Zhao, Benhui, et al.
Publicado: (2022) -
Exploring Cu-Doping for Performance Improvement in Sb(2)Se(3) Photovoltaic Solar Cells
por: Spaggiari, Giulia, et al.
Publicado: (2022) -
Suppression for an intermediate phase in ZnSb films by NiO-doping
por: Li, Chao, et al.
Publicado: (2017) -
An investigation into the effects of band gap and doping concentration on Cu(In,Ga)Se(2) solar cell efficiency
por: Asaduzzaman, Md., et al.
Publicado: (2016) -
Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells
por: Shoji, Yasushi, et al.
Publicado: (2021)