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Resistive switching behavior in α-In(2)Se(3) nanoflakes modulated by ferroelectric polarization and interface defects
Resistive switching devices based on ferroelectric two-dimensional (2D) van der Waals (vdW) nanomaterials may display simple structures, high density, high speed, and low power consumption, and can be used in flexible electronics and highly integrated devices. However, only a few studies about the i...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072215/ https://www.ncbi.nlm.nih.gov/pubmed/35530230 http://dx.doi.org/10.1039/c9ra06566k |