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Fermi surface chirality induced in a TaSe(2) monosheet formed by a Ta/Bi(2)Se(3) interface reaction

Spin-momentum locking in topological insulators and materials with Rashba-type interactions is an extremely attractive feature for novel spintronic devices and is therefore under intense investigation. Significant efforts are underway to identify new material systems with spin-momentum locking, but...

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Detalles Bibliográficos
Autores principales: Polyakov, Andrey, Mohseni, Katayoon, Felici, Roberto, Tusche, Christian, Chen, Ying-Jun, Feyer, Vitaly, Geck, Jochen, Ritschel, Tobias, Ernst, Arthur, Rubio-Zuazo, Juan, Castro, German R., Meyerheim, Holger L., Parkin, Stuart S. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072342/
https://www.ncbi.nlm.nih.gov/pubmed/35513364
http://dx.doi.org/10.1038/s41467-022-30093-1
Descripción
Sumario:Spin-momentum locking in topological insulators and materials with Rashba-type interactions is an extremely attractive feature for novel spintronic devices and is therefore under intense investigation. Significant efforts are underway to identify new material systems with spin-momentum locking, but also to create heterostructures with new spintronic functionalities. In the present study we address both subjects and investigate a van der Waals-type heterostructure consisting of the topological insulator Bi(2)Se(3) and a single Se-Ta-Se triple-layer (TL) of H-type TaSe(2) grown by a method which exploits an interface reaction between the adsorbed metal and selenium. We then show, using surface x-ray diffraction, that the symmetry of the TaSe(2)-like TL is reduced from D(3h) to C(3v) resulting from a vertical atomic shift of the tantalum atom. Spin- and momentum-resolved photoemission indicates that, owing to the symmetry lowering, the states at the Fermi surface acquire an in-plane spin component forming a surface contour with a helical Rashba-like spin texture, which is coupled to the Dirac cone of the substrate. Our approach provides a route to realize chiral two-dimensional electron systems via interface engineering in van der Waals epitaxy that do not exist in the corresponding bulk materials.